Speaker
Description
This work presents recent achievements in development and applications of ANSTO’s ANTARES [1] and SIRIUS [2] microprobe systems for the high-precision irradiation of materials and devices for prototyping and applications to microelectronics, photovoltaics and space. The ANSTO systems can be optimized to deliver a required combination of linear energy transfer, ion range, scanning size and speed and uniform ion flux or dose rate of proton (1-10 MeV/u) and medium - heavy ion (1-3 MeV/u) microbeams produced by the 10 MV tandem Van de Graaff accelerator and focusing ion microprobe (EM/q2=120), and thus meet custom demand for testing. The ANSTO testing capability offers 1) the 3D precision targeting of ions in user preselected region of interest in a device, 2) the rapid scanning microbeam irradiation with customized sweep time (pixel dwell time and pixel size), the slower, but larger in dimension, sample scanning with adjustable micromanipulator stage velocity or the hybrid-scanning (combining benefits of two) [3], 3) the optimized ion microbeam parameters (LET, energy(E), range(R), flux, and particle rate) and 4) irradiation in vacuum or in ambient [4]. For testing on the micrometer and microsecond scale we currently provide focused microbeams of: 1) protons (up to E=12MeV, LET(Si)≈ 0.03MeVcm2/mg, R(Si)≈800 micron), carbon ions (up to E=36 MeV, LET≈3 MeVcm2/mg, R≈40 micron), silicon ions (42 MeV, 14 MeVcm2/mg, 15 micron), chlorine (54 MeV, 17 MeVcm2/mg, 16 micron), iron (55 MeV, 28 MeVcm2/mg, 13 micron) and nickel ions (62 MeV, 28 MeVcm2/mg, 13 micron), but other ions with different E, LET and R values can also be arranged. As examples, we show case studies of 1) the Ion Beam Induced Charge – IBIC imaging of SOI and CVD diamond microdosimeters [5], 2) the PEEK material radiation hardness [6], 3) the effectiveness of prototyped magnetic shielding against ions in LEO for small cube satellites [7], 4) the radiation hardness and thermal recovery of proton irradiated Perovskite solar cells [8], and 5) the SEU and TID evaluation of SRAM chips [4].
[1] R. Siegele et al, Nucl. Instr. Meth. in Phys. Res. B 158, 31 (1999).
[2] Z. Pastuovic et al, Nucl. Instr. Meth. in Phys. Res. B 404, 1 (2017).
[3] S. Peracchi et al., Proc. 22nd Eur. Conf. on Radiat. Effects Compon. Syst. (RADECS), Venice, Italy, 2022.
[4] S. Peracchi et al., IEEE Trans Nucl. Sci. (In Press).
[5] V. Pan et al., IEEE Trans. Nucl. Sci. 70(4), 568 (2023).
[6] K. Rasheed et al., Polymer Testing 132, 108354 (2024).
[7] Under review.
[8] S. Tang et al., Adv. Energy Materials 13, 2300506 (2023).
